2SC5890 查看數據表（PDF） - Renesas Electronics

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2SC5890

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Renesas Electronics 

2SC5890

Silicon NPN Epitaxial

UHF / VHF wide band amplifier

Features

• High gain bandwidth product:

fT = 7.8 GHz typ.

• High power gain and low noise figure;

PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz

• High collector power dissipation:

Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm)

• High withstanding to ESD of collector to emitter:

Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.

Outline

MPAK

ADE-208-1533 (Z)

1st. Edition

Aug.2002

Note: Marking is “FS-”.

3

1

2

1. Emitter

2. Base

3. Collector

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