2SD1250A 查看數據表（PDF） - Panasonic Corporation
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2SD1250A Datasheet PDF : 2 Pages
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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0
IB=7mA
6mA
0.8
5mA
4mA
0.6
3mA
0.4
2mA
0.2
1mA
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
2SD1250, 2SD1250A
IC — VBE
1.2
1.0
25˚C
TC=100˚C –25˚C
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
10
IC/IB=10
3
1
TC=100˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
10000
3000
1000
hFE — IC
VCE=10V
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
10
ICP
3
IC
1
0.3
0.1
Non repetitive pulse
TC=25˚C
t=0.5ms
5ms
1ms
1s
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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