2SD1210 查看數據表（PDF） - Inchange Semiconductor
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2SD1210 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1210
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IBB
Base Current- Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
3
W
80
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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