1267A 查看數據表（PDF） - Panasonic Corporation
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1267A Datasheet PDF : 3 Pages
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Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB0942 (2SB942) and 2SB0942A (2SB942A)
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1267
60
VCBO
V
base voltage 2SD1267A
80
Collector to 2SD1267
60
emitter voltage 2SD1267A
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1267
current
2SD1267A
Collector cutoff
2SD1267
current
2SD1267A
Emitter cutoff current
Collector to emitter 2SD1267
voltage
2SD1267A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCB = 60V, VBE = 0
VCB = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
400
µA
400
700
µA
700
1
mA
60
V
80
70
250
15
2
V
1.5
V
20
MHz
0.4
µs
1.2
µs
0.5
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note)The part numbers in the parenthesis show conventional part number.
1
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