2SD1269 查看數據表（PDF） - Panasonic Corporation
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2SD1269 Datasheet PDF : 4 Pages
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Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB0944
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
φ 3.1±0.1
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one screw.
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
0.8±0.1
0.5+–00..12
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
130
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
80
V
sta tinu Emitter-base voltage (Collector open) VEBO
7
V
a e cycle iscon Collector current
IC
4
A
life d, d Peak collector current
ICP
8
A
n u duct type Collector power
PC
35
W
te tin Pro ued dissipation
Ta = 25°C
2.0
four ntin Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
ain onludes foell,opwlaned d ■ Electrical Characteristics TC = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
c tinued ance Collector-emitter voltage (Base open) VCEO
M is con inten Collector-base cut-off current (Emitter open) ICBO
/Dis ma Emitter-base cut-off current (Collector open) IEBO
D ance type, Forward current transfer ratio
hFE1
ten ce hFE2 *
Main tenan Collector-emitter saturation voltage
VCE(sat)
ain Base-emitter saturation voltage
VBE(sat)
ed m Transition frequency
fT
(plan Turn-on time
ton
IC = 10 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 1 A
IC = 3 A, IB = 0.15 A
IC = 3 A, IB = 0.15 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
Min Typ Max Unit
80
V
10
µA
50
µA
45
60
260
0.5
V
1.5
V
30
MHz
0.5
µs
Storage time
tstg
VCC = 50 V
2.5
µs
Fall time
tf
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180 130 to 260
Publication date: January 2003
SJD00183BED
1
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