2SD1328 查看數據表（PDF） - Panasonic Corporation
零件编号
产品描述 (功能)
生产厂家
2SD1328 Datasheet PDF : 2 Pages
| |||
Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Low ON resistance Ron.
q High foward current transfer ratio hFE.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage VCEO
20
V
Emitter to base voltage
VEBO
12
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1D
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
ICBO
VCBO
VCEO
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
Cob
Ron*3
VCB = 25V, IE = 0
100
nA
IC = 10µA, IE = 0
25
V
IC = 1mA, IB = 0
20
V
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A*2
IC = 0.5A, IB = 20mA*2
IC = 0.5A, IB = 50mA*2
12
V
200
800
0.13 0.4
V
1.2
V
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
VCB = 10V, IE = 0, f = 1MHz
10
pF
1.0
Ω
*2 Pulse measurement
*1hFE Rank classification
Rank
R
hFE
Marking Symbol
200 ~ 350
1DR
S
300 ~ 500
1DS
T
400 ~ 800
1DT
*3Ron Measurement circuit
1kΩ
IB=1mA
VB VV VA
Ron=
VB
VA–VB
!1000(Ω)
f=1kHz
V=0.3V
1
Share Link: 