2SD1406 查看數據表（PDF） - Inchange Semiconductor
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2SD1406 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1406
DESCRIPTION
·With TO-220Fa package
·Collector power dissipation
:PC=25W@TC=25℃
·Low collector saturation voltage
·Complement to type 2SB1015
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
60
60
7
3
0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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