2SD1406 查看數據表（PDF） - Inchange Semiconductor
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2SD1406 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A; VCE=5V
COB
Collector output capacitance
IE=0 ;f=1MHz ; VCB=10V
Switching times
ton
Trun-on time
ts
Storage time
tf
Fall time
RL=15Ω;VCC=30V
IB1=-IB2=0.2A
hFE-1 Classifications
O
Y
GR
60-120 100-200 150-300
Product Specification
2SD1406
MIN TYP. MAX UNIT
60
V
0.25 1.0
V
0.7 1.0
V
100 μA
100 μA
60
300
20
3
MHz
70
pF
0.8
μs
1.5
μs
0.8
μs
2
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