2SD1430 查看數據表（PDF） - Inchange Semiconductor
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2SD1430 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.8A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition freuqency
VEB=5V; IC=0
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
tf
Fall time
IC=3A;IB1=0.8A
Product Specification
2SD1430
MIN TYP. MAX UNIT
4.0
8.0
V
1.5
V
10
μA
1
mA
8
20
3
MHz
95
pF
1.0
μs
2
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