2SD1436 查看數據表（PDF） - Inchange Semiconductor
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2SD1436 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1436
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA ,IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A, IB=B 10mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 0.1A
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A, IB=B 10mA
2.0
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A, IB= 0.1A
www.iscsemi.cn ICBO
Collector Cutoff current
ICEO
Collector Cutoff current
hFE
DC Current Gain
Switching Times
VCB= 120V, IE= 0
VCE= 100V, RBE= ∞
IC= 5A; VCE= 3V
1000
3.5
V
0.1
mA
10
μA
20000
ton
Turn-On Time
toff
Turn-Off Time
IC = 5A, IB1 = -IB2= 10mA
0.8
μs
4.0
μs
isc Website：www.iscsemi.cn
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