2SD1494 查看數據表（PDF） - Inchange Semiconductor

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2SD1494

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1494

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

800

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

6

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A

5.0

V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= 2.5A; IB= 0.8A

VCB= 600V; IE= 0

1.5

V

10 μA

tf

Fall Time

IC= 2.75A, IB1= 0.6A, IB2= -1.3A

1.0 μs

isc Website：www.iscsemi.cn

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