2SD1263 查看數據表（PDF） - Inchange Semiconductor
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2SD1263 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1263 2SD1263A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
voltage
2SD1263
2SD1263A
IC=30mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=1A, IB=0.2A
VBE
Base-emitter voltage
IC=1A ; VCE=10V
IEBO
Emitter cut-off current
VEB=5V; IC=0
ICEO
Collector
cut-off current
2SD1263 VCE=150V; IB=0
2SD1263A VCE=200V; IB=0
ICES
Collector
cut-off current
2SD1263 VCE=350V; VBE=0
2SD1263A VCE=400V; VBE=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=0.3A ; VCE=10V
IC=1A ; VCE=10V
IC=0.5A; VCE=5V,f=10MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A;IB1=-IB2=0.1A
VCC=50V
hFE-1 Classifications
Q
P
70-150
120-250
MIN TYP. MAX UNIT
250
V
300
1.0
V
1.5
V
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
70
250
10
30
MHz
0.5
μs
2
μs
0.5
μs
2
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