2SD1521 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SD1521

Silicon NPN Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SD1521

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 50

60

voltage

[VZ]

(Zener breakdown voltage)

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

I CEO

—

—

DC current transfer ratio

hFE

2000 —

Collector to emitter saturation VCE (sat)1 —

—

voltage

VCE (sat)2

—

—

Base to emitter saturation

VBE (sat)1

—

—

voltage

VBE (sat)2

—

—

C to E diode forward voltage VD

—

—

Turn on time

Ton

—

0.5

Turn off time

Toff

—

2.0

Note: 1. Pulse test.

Max Unit

70

V

—

V

10

µA

30000

1.5 V

2.0 V

2.0 V

2.5 V

3.0 V

—

µs

—

µs

Test conditions

IC = 0.1 mA, IE = 0

IE = 50 mA, IC = 0

VCE = 50 V, RBE = ∞

VCE = 3 V, IC = 1 A*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

ID = 1.5 A

IC = 1 A, IB1 = –IB2 = 1 mA

Maximum Collector Dissipation Curve

15

10

5

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

10

iC (peak)

3 IC (max)

1.0

1 µs

100 µs

0.3

0.1

0.03

Ta = 25°C

1 shot pulse

0.01

3

10

30

100

300

Collector to emitter voltage VCE (V)

2

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