2SD1591 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SD1591 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=25mA
VBEsat Emitter-base saturation voltage
IC=10A; IB=25mA
ICBO
Collector cut-off current
VCB=100V; IE=0
ICEO
Collector cut-off current
VCE=100V; IE=0
IEBO
Emitter cut-off current
VEB=7V ;IC=0
hFE
DC current gain
IC=10A ; VCE=2V
www.jmnic.com
2SD1591
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
10
μA
500 μA
5
mA
1000
30000
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