2SD1742 查看數據表（PDF） - Panasonic Corporation
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2SD1742 Datasheet PDF : 3 Pages
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Power Transistors
2SD1742, 2SD1742A
Silicon NPN triple diffusion planar type
For low-frequency power amplification
Complementary to 2SB1172 and 2SB1172A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1742 VCBO
60
V
(Emitter open)
2SD1742A
80
Collector-emitter voltage 2SD1742 VCEO
60
V
(Base open)
2SD1742A
80
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1742 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD1742A
80
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
VBE
2SB1742 ICES
2SB1742A
Collector-base cutoff
current (Emitter open)
2SB1742 ICBO
2SB1742A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 3 A
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
1.8
V
200 µA
200
300 µA
300
1
mA
70
250
10
1.2
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Publication date: September 2003
SJD00214BED
1
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