2SD1749 查看數據表（PDF） - Panasonic Corporation
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2SD1749 Datasheet PDF : 3 Pages
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Power Transistors
2SD1749, 2SD1749A
Silicon NPN triple diffusion planar type darlington
For low-frequency power amplification
Complementary to 2SB1179 and 2SB1179A
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1749 VCBO
60
V
(Emitter open)
2SD1749A
80
7.0±0.3
3.0±0.2
2.0±0.2
Unit : mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SD1749 VCEO
60
V
(Base open)
2SD1749A
80
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
4
A
Peak collector current
ICP
8
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1749 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD1749A
80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
VBE
2SB1749 ICBO
2SB1749A
Collector-emitter cutoff
current (Base open)
2SB1749 ICEO
2SB1749A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
IEBO
hFE1
hFE2 *
VCE(sat)
Forward current transfer ratio
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
VCE = 3 V, IC = 3 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3 A, IB1 = 12 mA, IB2 = − 12 mA
VCC = 50 V
1 000
2 000
2.5
V
200 µA
200
500 µA
500
2
mA
10 000
2.0
V
4.0
20
MHz
0.5
µs
4.0
µs
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
2 000 to 5 000 4 000 to 10 000
Publication date: September 2003
SJD00221BED
1
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