2SD1753 查看數據表（PDF） - Panasonic Corporation
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2SD1753 Datasheet PDF : 2 Pages
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Power Transistors
2SD1753
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage VCEO
150
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
2.5
A
Collector current
IC
1
A
Base current
IB
0.1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
1.3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
*hFE Rank classification
Rank
Q
P
hFE
500 to 1200 800 to 2000
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
100
µA
100
µA
150
V
500
2000
1
V
25
MHz
1
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