2SD1755 查看數據表（PDF） - Panasonic Corporation

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2SD1755

Silicon NPN epitaxial planar type

Panasonic Corporation 

Power Transistors

2SD1755

Silicon NPN epitaxial planar type

For power amplification with high forward current transfer ratio

7.0±0.3

3.0±0.2

Unit: mm

3.5±0.2

s Features

q High forward current transfer ratio hFE which has satisfactory

linearity

q High emitter to base voltage VEBO

q I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

s Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

100

V

Collector to emitter voltage VCEO

60

V

Emitter to base voltage

VEBO

15

V

Peak collector current

ICP

12

A

Collector current

IC

6

A

Base current

IB

3

A

Collector power TC=25°C

dissipation

Ta=25°C

PC

15

W

1.3

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

–55 to +150

˚C

1.1±0.1

0.75±0.1

0.85±0.1

0.4±0.1

2.3±0.2

4.6±0.4

123

7.0±0.3

2.0±0.2

3.0±0.2

1:Base

2:Collector

3:Emitter

I Type Package

Unit: mm

3.5±0.2

0 to 0.15

1.1±0.1

0.75±0.1

123

2.3±0.2

4.6±0.4

2.5

0.5 max.

0.9±0.1

0 to 0.15

1:Base

2:Collector

3:Emitter

I Type Package (Y)

s Electrical Characteristics (TC=25˚C)

Parameter

Symbol

Conditions

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

ICBO

IEBO

VCEO

hFE*

VCE(sat)

fT

ton

tstg

tf

VCB = 100V, IE = 0

VEB = 15V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 1A

IC = 5A, IB = 0.1A

VCE = 12V, IC = 0.5A, f = 10MHz

IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,

VCC = 50V

min

typ

max Unit

100

µA

100

µA

60

V

300

2000

0.5

V

50

MHz

0.3

µs

1.5

µs

0.6

µs

*hFE Rank classification

Rank

Q

P

hFE

300 to 1200 800 to 2000

1

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