2SD1649 查看數據表（PDF） - Inchange Semiconductor

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2SD1649

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.6A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=10V

VF

Diode forward voltage

tf

Fall time

IF=2.5A

IC=2A;IB1=0.6A;IB2=-1.2A

VCC=200V;RL=100Ω

Product Specification

2SD1649

MIN TYP. MAX UNIT

7

V

800

V

1500

V

8.0

V

1.5

V

10

μA

40

130 mA

8

3

MHz

2.0

V

0.4

μs

2

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