2SD1705 查看數據表（PDF） - Inchange Semiconductor
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2SD1705 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat)-1 Base -Emitter Saturation Voltage
IC= 6A; IB=B 0.3A
VBE(sat)-2 Base -Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
hFE-3
DC Current Gain
IC= 6A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 6A, IB1= -IB2= 0.6A;
VCC= 50V
hFE-2Classifications
Q
P
90-180 130-260
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
1.5
V
2.5
V
10 μA
50 μA
45
90
260
30
20
MHz
0.5
μs
2.0
μs
0.2
μs
isc Website：www.iscsemi.cn
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