D1709 查看數據表（PDF） - Inchange Semiconductor

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D1709

Darlington Transistor(7A NPN)

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1709

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

800

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

40

hFE-1

tf

www.iscsemi.cn DC Current Gain

Fall Time

IC= 0.5A ; VCE= 5V

8

IC= 4A , IB1= 0.8A ; IB2= -1.6A

PW=20μs; Duty Cycle≤1%

V

5.0

V

1.5

V

10 μA

130 mA

0.5 μs

isc Website：www.iscsemi.cn

2

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