2SD1938 查看數據表（PDF） - Panasonic Corporation
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2SD1938 Datasheet PDF : 3 Pages
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Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
■ Features
• Low ON resistance Ron
• High forward current transfer ratio hFE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
25
V
Collector current
IC
300
mA
Peak collector current
ICP
500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking symbol: 3W
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
Base-emitter voltage
VBE VCE = 2 V, IC = 4 mA
0.6
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0
0.1
µA
Forward current transfer ratio *1
hFE VCE = 2 V, IC = 4 mA
500
2 500
Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
0.1
V
Transition frequency
fT
VCB = 6 V, IE = −4 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
7
pF
ON resistance *2
Ron
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
No rank
1 kΩ
hFE
500 to 1 500 800 to 2 500
Product of no-rank classification is not marked.
500 to 2 500
IB = 1 mA
VB VV VA
f = 1 kHz
V = 0.3 V
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: August 2004
SJC00313AED
1
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