2SD1846 查看數據表（PDF） - Inchange Semiconductor
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2SD1846 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.8A
ICBO
Collector cut-off current
hFE-1
DC current gain
VCB=750V; IE=0
VCB=1500V; IE=0
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=10V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=0.5MHz
VF
Diode forward voltage
IC=3.5A
Switching times resistive load
ts
Storage time
tf
Fall time
IC=3A; IB1=0.8A; IB2=-1.6A
VCC=200V
Product Specification
2SD1846
MIN TYP. MAX UNIT
7
V
8.0
V
1.5
V
10
μA
1.0 mA
5
25
4
2
MHz
2.0
V
1.5
μs
0.2
μs
2
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