D1881 查看數據表（PDF） - SavantIC Semiconductor

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D1881

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1881

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A

VBEsat

Base-emitter saturation voltage

IC=8A ;IB=1.6A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=4V ;IC=0

ICES

Collector cut-off current

VCE=1500V

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=8A ; VCE=5V

VF

Diode forward voltage

tf

Fall time

IEC=10A

IC=6A; VCC=200V;

RL=33.3@;IB1=1.2A;IB2=-2.4A;

MIN TYP. MAX UNIT

800

V

5

V

1.5

V

10 µA

40

130 mA

1.0 mA

8

5

10

2

V

0.1 0.3 µs

2

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