2SD2052 查看數據表（PDF） - Panasonic Corporation
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2SD2052 Datasheet PDF : 3 Pages
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Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
100
Al heat sink
(3) Without heat sink
(1) (PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
TC=100˚C
25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.003
0.001
0.1 0.3 1 3 10 30 100
Collector current IC (A)
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
1
3
10
30
100
Collector to base voltage VCB (V)
IC — VCE
20
TC=25˚C
IB=1000mA
900mA
16
800mA
700mA
600mA
500mA
12
400mA
300mA
200mA
8
100mA
4
50mA
2SD2052
IC — VBE
20
VCE=5V
16
25˚C
12
TC=–25˚C
100˚C
8
4
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
10000
3000
1000
hFE — IC
VCE=5V
300
TC=100˚C
100
25˚C
–25˚C
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
100
30
ICP
10
IC
3
1
Non repetitive pulse
TC=25˚C
t=10ms
100ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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