2SD2108 查看數據表（PDF） - Inchange Semiconductor

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2SD2108

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2108

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 4A

·High DC Current Gain

: hFE= 1000(Min) @ IC= 4A, VCE= 3V

APPLICATIONS

·Designed for low frequency power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

12

A

25

W

2

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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