INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2108
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 80mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB=B 8mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB=B 80mA
ICBO
Collector Cutoff Current
VCB= 65V; IE= 0
ICEO
Collector Cutoff Current
VCE= 65V; RBE= ∞
hFE
DC Current Gain
IC= 4A; VCE= 3V
MIN TYP. MAX UNIT
80
V
80
V
7
V
1.5
V
3.0
V
2.0
V
3.5
V
10
μA
10
μA
1000
20000
isc Website:www.iscsemi.cn
2