D2082 查看數據表（PDF） - Quanzhou Jinmei Electronic
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D2082 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD2082
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=8A;IB=16m A
VBEsat Base-emitter saturation voltage
IC=8A;IB=16m A
VCEO(BR) Collector-emitter breakdown voltage IC=10mA;IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
ICBO
Collector cut-off current
VCB=120V; IE=0
hFE
DC current gain
fT
Transition frequency
COB
Output capacitance
Switching times
IC=8 A ; VCE=4V
IC=1 A ; VCE=12V
IE=0 ; VCB=10V;f=1MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A IB1=-IB2=16mA
VCC=40V ,RL=5Ω
MIN
120
2000
TYP.
20
210
MAX
1.5
2.5
10
10
UNIT
V
V
V
mA
μA
MHz
pF
0.6
μs
7.0
μs
1.5
μs
JMnic
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