2SD2258(2002) 查看數據表（PDF） - Panasonic Corporation
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2SD2258 Datasheet PDF : 3 Pages
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Transistor
2SD2258
Silicon NPN epitaxial planar type
For low-frequency output amplification
s Features
• Darlington connection
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Printed circuit board: Copper foil area of 1cm2 or more, and the
board thickness of 1.7 mm for the collector portion
0.45+–00..0150
1.05±0.05
0.45+–00..0150
2.5±0.5
2.5±0.5
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Internal Connection
C
B
≈200 Ω
E
s Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *2
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
VCB = 45 V, IE = 0
VEB = 4 V, IC = 0
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
Note) *1: Pulse measurement
*2: hFE Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Min
60
50
5
4 000
Typ Max
0.1
0.1
40 000
1.8
2.2
150
Unit
µA
µA
V
V
V
V
V
MHz
Publication date: March 2002
SJC00271BED
1
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