D2358 查看數據表（PDF） - Panasonic Corporation
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D2358 Datasheet PDF : 1 Pages
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Transistors
2SD2358
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1538
I Features
• Low collector to emitter saturation voltage VCE(sat): < 0.15 V
• Allowing supply with the radial taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
10
V
Collector to emitter voltage
VCEO
10
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.2
A
Collector current
IC
1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45−0.05
2.5±0.5 2.5±0.5
1
2
3
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+−00..105
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
VCB = 7 V, IE = 0
IC = 10 µA, IE = 0
10
IC = 1 mA, IB = 0
10
IE = 10 µA, IC = 0
5
VCE = 2 V, IC = 100 mA
200
IC = 500 mA, IB = 20 mA
VCB = 5 V, IE = −50 mA, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
1
800
0.15
120
30
µA
V
V
V
V
MHz
pF
1
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