2SD2528
Power Transistors
50
(1)
40
30
PC Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) IC
102
IC/IB=50
10
1
10–1
IC VCE
8
TC=25˚C
7
6
5 IB=10mA
4
3
2
1
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) IC
10
1
10–1
10–2
10–3
10–1
1
10
Collector current IC (A)
hFE IC
104
103
102
fT IC
300
VCE=12V
f=10MHz
TC=25˚C
100
30
10
10–2
10–1
1
10
Collector current IC (A)
ton, tstg, tf IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=50 (IB1=–IB2)
VCC=50V
10
TC=25˚C
tstg
3
1
tf
ton
0.3
0.1
0.03
0.01
012345678
Collector current IC (A)
10
10–2
10–1
1
10
Collector current IC (A)
Area of safe operation (ASO)
30
10 ICP
IC
3
1
10ms
t=1ms
1s
0.3
0.1
Non repetitive pulse
TC=25˚C
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
0.003 0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
2