D2544 查看數據表（PDF） - Panasonic Corporation
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D2544 Datasheet PDF : 4 Pages
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Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Allowing supply with the radial taping
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Collector power TC = 25°C
PC
15
W
dissipation
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4 (MT4 Type Package)
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60 V, IE = 0
10
µA
VEB = 7 V, IC = 0
10
µA
IC = 10 mA, IB = 0
60
V
VCE = 2 V, IC = 0.8 A
500 1 000 2 000
VCE = 2 V, IC = 2 A
60
IC = 2 A, IB = 50 mA
0.5
V
IC = 2 A, IB = 50 mA
1.5
V
VCE = 10 V, IC = 0.5 A, f = 10 MHz
70
MHz
IC = 2 A, IB1 = 50 mA, IB2 = −50 mA,
0.5
µs
VCC = 50 V
3.6
µs
1.1
µs
Note) *: Rank classification
Rank
Q
P
hFE1 500 to 1 200 800 to 2 000
1
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