2SD2386 查看數據表（PDF） - Toshiba
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2SD2386 Datasheet PDF : 4 Pages
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2SD2386
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2386
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 140 V (min)
• Complementary to 2SB1557
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
140
V
140
V
5
V
7
A
0.1
A
70
W
150
°C
−55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
≈ 100 Ω
EMITTER
1
2004-07-07
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