D2495 查看數據表（PDF） - Sanken Electric co.,ltd.

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D2495

Silicon NPN Triple Diffused Planar Transistor

Sanken Electric co.,ltd. 

2SD2495 Darlington

Equivalent circuit C

B

(70Ω)

E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626)

Application : Audio, Series Regulator and General Purpose

sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics

(Ta=25°C)

Symbol

2SD2495

Unit

VCBO

110

V

VCEO

110

V

VEBO

5

V

IC

6

A

IB

1

A

PC

30(Tc=25°C)

W

Tj

150

°C

Tstg

–55 to +150

°C

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

IC=5A, IB=5mA

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SD2495

100max

100max

110min

5000min∗

2.5max

3.0max

60typ

55typ

Unit

µA

µA

V

V

V

MHz

pF

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

sTypical Switching Characteristics (Common Emitter)

VCC

RL

IC

VBB1

VBB2

IB1

IB2

ton

tstg

tf

(V)

(Ω)

(A)

(V)

(V)

(mA)

(mA)

(µs)

(µs)

(µs)

30

6

5

10

–5

5

–5

0.8typ 6.2typ 1.1typ

External Dimensions FM20(TO220F)

10.1±0.2

4.2±0.2

2.8 c0.5

ø3.3±0.2

a

b

1.35±0.15

1.35±0.15

2.54

0.85

+0.2

-0.1

2.54

0.45

+0.2

-0.1

2.4±0.2

2.2±0.2

Weight : Approx 2.0g

BCE

a. Type No.

b. Lot No.

I C– V CE Characteristics (Typical)

6

0.5mA

0.4mA

0.3mA

4

0.2mA

2

IB=0.1mA

0

0

2

4

6

Collector-Emitter Voltage VCE(V)

V CE( s a t ) – I B Characteristics (Typical)

3

2

IC=5A

1

IC=3A

0

0.1

0.5 1

5 10

Base Current IB(mA)

50 100

I C– V BE Temperature Characteristics (Typical)

(VCE=4V)

6

4

2

0

0

1

2

2.5

Base-Emittor Voltage VBE(V)

h FE– I C Characteristics (Typical)

40000

(VCE=4V)

Typ

10000

5000

h FE– I C Temperature Characteristics (Typical)

40000

(VCE=4V)

10000

125˚C

5000

25˚C

1000

1000

500

–30˚C

500

200

100

0.02

0.1

0.5 1

56

0.02

0.1

0.5 1

56

Collector Current IC(A)

Collector Current IC(A)

θ j-a– t Characteristics

4

1

0.5

0.3

1

5 10

50 100

Time t(ms)

500 1000

f T– I E Characteristics (Typical)

(VCE=12V)

80

Typ

60

40

20

0

–0.02

–0.1

–1

–6

Emitter Current IE(A)

Safe Operating Area (Single Pulse)

30

10

5

1

10m

00ms

s

DC

1

0.5

0.1

0.05

3

Without Heatsink

Natural Cooling

5

10

50 100 200

Collector-Emitter Voltage VCE(V)

Pc–Ta Derating

30

20

10

Without Heatsink

2

0

0

25

50

75

100 125 150

Ambient Temperature Ta(˚C)

155

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