2SD2652(2015) 查看數據表（PDF） - ROHM Semiconductor
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2SD2652 Datasheet PDF : 7 Pages
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2SD2652
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
15
V
VCEO
12
V
VEBO
6
V
IC
1.5
A
ICP*1
3
A
PD*2
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 10μA
15 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
12 -
-
V
Emitter-base breakdown voltage BVEBO IE = 10μA
6
-
-
V
Collector cut-off current
ICBO VCB = 15V
-
- 100 nA
Emitter cut-off current
IEBO VEB = 6V
-
- 100 nA
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 25mA
-
80 200 mV
DC current gain
hFE*3 VCE = 2V, IC = 200mA 270
-
680
-
Transition frequency
f T*3
VCE = 2V, IE = -200mA,
f = 100MHz
-
400
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0mA,
f = 1MHz
*1 Pw=1ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Pulsed
-
12
-
pF
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