2SD2560 查看數據表（PDF） - SavantIC Semiconductor
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2SD2560 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2560
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=10mA
ICBO
Collector cut-off current
VCB=150V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=10A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4B
IB1=-IB2=10mA
VCC=40V
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100
µA
100
µA
5000
120
pF
70
MHz
0.8
µs
4.0
µs
1.2
µs
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2
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