D2253 查看數據表（PDF） - SavantIC Semiconductor
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D2253 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2253
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
COB
Collector output capacitance
VF
Diode forward voltage
ts
Storage time
tf
Fall time
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=5A
Resistive load
ICP=5A ;IB1=1A;IB2=-2A;RL=40A
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
10
µA
66
200 mA
8
28
1
3
MHz
250
pF
2.0
V
6.0
µs
0.4
µs
2
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