2SD2498 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

2SD2498

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2498

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=1500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IC=0.1A ; VCE=10V

Switching times :

ts

Storage time

tf

Fall time

ICP=4A;IB1=0.8A

fH =15.75kHz

MIN TYP. MAX UNIT

600

V

5

V

0.9

1.2

V

1

mA

10

μA

10

30

5

9

95

pF

2

MHz

7

10

μs

0.4

0.7

μs

2

Share Link: