2SD669XG-X-AA3-R 查看數據表（PDF） - Unisonic Technologies
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2SD669XG-X-AA3-R Datasheet PDF : 4 Pages
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2SD669/A
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
30
vs. Collector Current
0
25
TA=75°C
0
20
25
0
15
-20
0
10
0
50
VCE=5V
1
1 3 10 30 100 300 1000 3000
Collector Current, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
1.2
IC=10IB
1.0
TC=-20°C
0.8
25
0.6
75
0.4
0.2
0
1 3 10 30 100 300 1,000
Collector Current, IC (mA)
Collector Output Capacitance
200
vs. Collector to Base Voltage
f=1MHz
100 IE=0
50
20
10
5
2
12
5 10 20 50 100
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector to Emitter Saturation
Voltage vs. Collector Current
1.2
IC=10 IB
1.0
0.8
0.6
0.4
0.2
0
1
T C=75°C
25
-20
3 10 30 100 300 1000
Collector Current, IC (mA)
Gain Bandwidth Product vs.
Collector Current
240
VCE=5V
TA=25°C
200
160
120
80
40
0
10
30
100 300 1,000
Collector Current, IC (mA)
Area of Safe Operation
3
(13.3V, 1.5A)
1.0
40V, 0.5A
0.3
2SD669A
DC Operation (TC=25°C)
0.1
(120V, 0.04A)
0.03
(160V, 0.02A)
2SD669
0.01
1
3
10 30 100 300
Collector to Emitter Voltage, VCE (V)
3 of 4
QW-R204-005,J
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