D531 查看數據表（PDF） - Inchange Semiconductor
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D531 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=2V
Product Specification
2SD531
MIN TYP. MAX UNIT
90
V
100
V
8
V
2.0
V
0.1 mA
0.1 mA
60
2
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