2SD640 查看數據表（PDF） - Inchange Semiconductor

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2SD640

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD640

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V (Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V (Max.)@ IC= 5A

APPLICATIONS

·High voltage switching applications.

·High power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

600

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

2

A

100

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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