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1N5818G 查看數據表(PDF) - Electronics Industry

零件编号
产品描述 (功能)
生产厂家
1N5818G
EIC
Electronics Industry EIC
1N5818G Datasheet PDF : 2 Pages
1 2
1N5817 - 1N5819
PRV : 20 - 40 Volts
IO : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
0.107 (2.74)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length at TL = 90 °C
Peak Forward Surge Current, 8.3ms single half sine wave
Superimposed on rated load (JEDEC Method) TL = 70 °C
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage (Note 1) Ta = 100 °C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
RθJL
CJ
TJ
TSTG
1N5817
20
14
20
0.45
1N5818
30
21
30
1N5819
40
28
40
1.0
25
0.55
0.6
1.0
10
15
110
- 65 to + 125
- 65 to + 125
UNIT
Volts
Volts
Volts
Amp.
Amps.
Volt.
mA
mA
°C/W
pF
°C
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
(2) Thermal Resistance from junction to lead, PC board Mounting with 0.375" (9.5mm) Lead Lengths and 1.5 in2
(38.1mm2) copper pads.
(3) Measured at 1 MHz and applied reverse voltage of 4.0 volts.
UPDATE : SEPTEMBER 12, 1998

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