2SD841 查看數據表（PDF） - Inchange Semiconductor
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2SD841 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD841
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High speed switching
·High voltage:VCBO=800V(Min)
APPLICATIONS
·High voltage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
5
UNIT
V
V
V
IC
Collector current
3
A
IB
Base current
1.5
A
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
40
W
2
150
℃
-55~150
℃
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