2SD841 查看數據表（PDF） - Inchange Semiconductor
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2SD841 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD841
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
1.0
V
VBEsat Base-emitter saturation voltage
IC=0.5A; IB=50mA
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
8
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
fT
COB
tf
Transition frequency
固IN电C半H导AN体GE SEMICONDUTOR Output capacitance
Fall time
IE=-0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IC=0.5A; IB1=-IB2=50mA
VCC=200V; RL=400Ω
4
75
1.0
MHz
pF
μs
2
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