2SD845 查看數據表（PDF） - Inchange Semiconductor

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2SD845

NPN EPITAXIAL TRANSISTOR

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD845

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 150V(Min)

·Good Linearity of hFE

·Complement to Type 2SB755

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

12

A

IE

Emitter Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-12

A

120

W

150

℃

-55~150

℃

isc website：www.iscsemi.cn

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