2SD860 查看數據表（PDF） - Inchange Semiconductor
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2SD860 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD860
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
DC Current Gain
IC= 2A; VCE= 10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
MIN TYP. MAX UNIT
250
V
1.0
V
1.5
V
1
mA
1
mA
1
mA
40
250
10
0.2
μs
2.0
μs
hFE-1 Classifications
R
Q
P
40-90 70-150 120-250
isc Website：www.iscsemi.cn
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