2SD968 查看數據表（PDF） - Panasonic Corporation
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2SD968 Datasheet PDF : 3 Pages
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Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
Unit: mm
I Features
G High collector to emitter voltage VCEO.
G Large collector power dissipation PC.
G Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD0968
100
base voltage 2SD0968A
VCBO
120
V
Collector to 2SD0968
100
emitter voltage 2SD0968A
VCEO
120
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
I Electrical Characteristics (Ta=25˚C)
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : W(2SD0968)
V(2SD0968A)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter 2SD0968
100
VCEO
IC = 100µA, IB = 0
V
voltage
2SD0968A
120
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 150mA*2
90
220
VCE = 5V, IC = 500mA*2
50
100
IC = 500mA, IB = 50mA*2
0.2
0.6
V
IC = 500mA, IB = 50mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz
120
MHz
VCB = 10V, IE = 0, f = 1MHz
11
20
pF
*2 Pulse measurement
Rank
Q
R
hFE1
Marking 2SD0968
Symbol
2SD0968A
90 ~ 155
WQ
VQ
130 ~ 220
WR
VR
Note.) The Part numbers in the Parenthesis show conventional
part number.
1
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