D959 查看數據表（PDF） - SavantIC Semiconductor
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D959 Datasheet PDF : 5 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD959
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.1A
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=100V;IE=0
VEB=5V; IC=0
IC=0.1A ; VCE=2V
IC=0.5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A
IB1=-IB2=50mA
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10
µA
50
µA
45
60
260
30
MHz
0.5
µs
2.5
µs
0.15
µs
hFE-2 classifications
R
Q
P
60-120 90-180 130-260
2
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