2SJ345 查看數據表（PDF） - Toshiba
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2SJ345 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ345
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: Vth = −0.5~−1.5 V
• High speed
• Small package
• Complementary to 2SK1828
Marking
Equivalent Circuit
2SJ345
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
PD
Tch
Tstg
−20
V
−7
V
−50
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
IGSS
V (BR) DSS
IDSS
Vth
⎪Yfs⎪
RDS (ON)
Ciss
Crss
Coss
ton
toff
Test Condition
VGS = −7 V, VDS = 0
ID = −100 μA, VGS = 0
VDS = −20 V, VGS = 0
VDS = −3 V, ID = −0.1 mA
VDS = −3 V, ID = −10 mA
ID = −10 mA, VGS = −2.5 V
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
Min Typ. Max Unit
⎯
⎯
−1
μA
−20 ⎯
⎯
V
⎯
⎯
−1
μA
−0.5
⎯
−1.5
V
15
⎯
⎯
mS
⎯
20
40
Ω
⎯ 10.4 ⎯
pF
⎯
2.8
⎯
pF
⎯
8.4
⎯
pF
⎯ 0.15 ⎯
μs
⎯ 0.13 ⎯
1
2007-11-01
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