J349 查看數據表（PDF） - Toshiba

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J349

Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = −60 V, VGS = 0 V

ID = −10 mA, VGS = 0 V

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −10 A

VGS = −10 V, ID = −10 A

VDS = −10 V, ID = −10 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ −48 V, VGS = −10 V, ID = −20 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = −20 A, VGS = 0 V

IDR = −20 A, VGS = 0 V,

dIDR / dt = 50 A / μs

Marking

2SJ349

Min Typ. Max Unit

—

—

±10

μA

—

— −100 μA

−60 —

—

V

−0.8 —

−2.0

V

—

50

90

mΩ

—

33

45

10

20

—

S

— 2800 —

— 450 —

pF

— 1300 —

—

15

—

—

35

—

ns

—

25

—

— 120 —

—

90

—

—

65

—

nC

—

25

—

Min Typ. Max Unit

—

— −20

A

—

— −80

A

—

—

1.7

V

—

75

—

ns

—

83

—

μC

J349

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-16

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